<sup>11</sup>B in the form of Boron Trifluoride Gas

11B in the form of Boron Trifluoride Gas

Boron isotopes

Boron trifluoride gas is the ideal silicon wafer dopant for the production of highly integrated, high-density microchips. 11BF3 provides for greater efficiency and increased production throughput, and helps to make chips smaller and better.

The information contained herein has been prepared at your request by qualified experts within Stable Isotopes Institute of Georgia. While we believe that the information is accurate within the limits of the analytical methods employed and is complex to the extent of the specified analyses performed, we make no warranty or representation as to the suitability of the use of the information for any particular purpose. The information is offered with the understanding that any use of the information is at the sole discretion and risk of the user. In no event shall the liability of Stable Isotopes Institute of Georgia arising out of the use of the information contained herein exceed the fee established for providing such information.

Specifications

Customer :
Gas : 11Boron Trifluoride, Enriched
Cylinder No. : 25A050121
P/N : 20260603-P01-4710
Valve : CGA642
Fill Pressure
at 70°F(21.1°C)		 : 1388 PSIG nominal
Lot No. : S1-260603-11BF₃-01
Cylinder Size : 47 L
Net weight : 20,900 g
Filling Date : 2026.06.03
Expiration Date : 2028.06.02

ISOTOPIC ENRICHMENT

Item Symbol Units Spec. Control Limit Det. Limit Actual Result Analysis Method
Boron-11 ¹¹B At. % >99.992 ≥99.995 - 99.997 ICP-MS
Boron-11 ¹¹B Wt. % >99.992 ≥99.995 - 99.997 ICP-MS

CHEMICAL PURITY

Item Formula Units Spec. Control Limit Det. Limit Actual Result Analysis Method
¹¹BF₃ ¹¹BF₃ mol% >99.999 >99.9995 - 99.9998 -
Oxygen+Argon O₂+Ar ppmv <1   0.004 0.008 GC/DID
Nitrogen N₂ ppmv <2 - 0.0075 0.065 GC/DID
Carbon Dioxide CO₂ ppmv <2   0.0028 0.076 GC/DID
Total Air (O₂+Ar+N₂+CO₂)   ppmv <5     0.149  
Methane CH₄ ppmv <0.5   0.005 0.007 GC/DID
Carbon Monoxide CO ppmv <2   0.0081 ND GC/DID
Sulfur Dioxide SO₂ ppmv <1.5 - 0.0071 ND GC/FPD
Silicon Tetrafluoride SiF₄ ppmv <1   0.02 0.32 FTIR
Hydrogen Fluoride HF ppmv <2   0.02 1.66 FTIR

* 1.Quantification of isotopic enrichment and metallic ion contents was performed by ICP‑MS with certified reference material calibration and instrumental mass bias correction for isotopic ratios, and calibrated with elemental standard solutions for trace metal analysis.

 

Leak Check
# Area Checked Detector MDL Result Pass/Fail
1 Diaphragm (Bonnet) DOD CLPX BF₃ 98.5 ppb < 98.5 ppb PASS
2 Diaphragm (Weep Hole) DOD CLPX BF₃ 98.5 ppb < 98.5 ppb PASS
3 Valve Seat DOD CLPX BF₃ 98.5 ppb < 98.5 ppb PASS
4 Valve Outlet Connection DOD CLPX BF₃ 98.5 ppb < 98.5 ppb PASS
5 Shank At Valve Neck DOD CLPX BF₃ 98.5 ppb < 98.5 ppb PASS
6 Pressure Relief Device N/A N/A N/A N/A
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